Title :
Effect of hydrogen on (Pb,La)(Zr,Ti)O3 (PLZT) thin film capacitors with Pt or Ir-based top electrodes
Author :
Yoon, Soon-Gil ; Wicaksana, Dwi ; Kim, Dong-Joo ; Kim, Seung-Hyun ; Kingon, A.I.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The degradation behavior of polarization and leakage current characteristics of sol-gel-derived PLZF thin films, with Pt and IrO2 top electrodes, by annealing under a 4% H2/96% N2 atmosphere are investigated. The leakage current behaviors of Pt/PLZT/Pt and IrO2/PLZr/Pt capacitors annealed at 300°C for 20 min in 4% H2 are consistent with a proposed space-charge influenced injection model. However, IrO2 /PLZT/Pt capacitors recovered at 700°C for 10 min in Ar ambient after hydrogen annealing are not consistent with the proposed model because a conducting phase of IrPb is formed between the top electrode and PLZT during recovery annealing at 700°C in Ar ambient. The P-E loops of Pt/PLZT/Pt capacitors show good recovery through recovery annealing after H2 treatment. However, the IrO2 /PLZT/Pt capacitors depend on the recovery annealing atmosphere (Ar or O2)
Keywords :
annealing; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric thin films; hydrogen; iridium compounds; lanthanum compounds; lead compounds; leakage currents; platinum; 10 min; 20 min; 300 degC; 700 degC; Ar; H2-N2; IrO2; IrO2 top electrodes; IrO2/PLZr/Pt capacitor; IrPb conducting phase; O2; P-E loops; PLZT; PLZT thin film capacitors; PbLaZrO3TiO3; Pt; Pt top electrode; Pt/PLZT/Pt capacitor; annealing; hydrogen annealing; hydrogen effect; leakage current; polarization degradation; recovery annealing; sol-gel-derived PLZF thin film; space-charge influenced injection model; Annealing; Argon; Atmosphere; Capacitors; Degradation; Electrodes; Hydrogen; Leakage current; Polarization; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942475
