DocumentCode
3365735
Title
A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET
Author
Porzio, A. ; Velardi, F. ; Busatto, G. ; Iannuzzo, F. ; Sanseverino, A. ; Currò, G.
Author_Institution
D.A.E.I.M.I., Univ. of Cassino, Cassino, Italy
fYear
2008
fDate
10-12 Sept. 2008
Firstpage
209
Lastpage
212
Abstract
In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.
Keywords
electric field effects; power MOSFET; 3D simulation study; electric field; heavy ion impact; medium voltage power MOSFET; single event gate damage; Electric fields; Logic gates; Power MOSFET; Radiation effects; Semiconductor process modeling; Solid modeling; Latent damage; Power MOSFETs; SEGR;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location
Jyvaskyla
ISSN
0379-6566
Print_ISBN
978-1-4577-0481-9
Type
conf
DOI
10.1109/RADECS.2008.5782713
Filename
5782713
Link To Document