Title :
A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET
Author :
Porzio, A. ; Velardi, F. ; Busatto, G. ; Iannuzzo, F. ; Sanseverino, A. ; Currò, G.
Author_Institution :
D.A.E.I.M.I., Univ. of Cassino, Cassino, Italy
Abstract :
In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.
Keywords :
electric field effects; power MOSFET; 3D simulation study; electric field; heavy ion impact; medium voltage power MOSFET; single event gate damage; Electric fields; Logic gates; Power MOSFET; Radiation effects; Semiconductor process modeling; Solid modeling; Latent damage; Power MOSFETs; SEGR;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location :
Jyvaskyla
Print_ISBN :
978-1-4577-0481-9
DOI :
10.1109/RADECS.2008.5782713
