DocumentCode :
3365752
Title :
Orientation dependence of ferroelectricity of epitaxially grown Pb(ZrxTi1-x)O3 thin films prepared by metalorganic chemical vapor deposition
Author :
Funakubo, H. ; Nagashima, Kmiharu ; Aratani, Masanon
Author_Institution :
Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
953
Abstract :
Epitaxial PZT films with (001)- and (100)-, (101)-,(110)- and (111)-orientations were grown on (100)SrRuO3//(100)SrTiO3, (110)SrRuO3//(110)SrTiO3 and (111)SrRuO3//(111)SrTiO3 substrates, respectively. The two composition films with Zr/(Zr+Ti) ratios of 0.42 and 0.68 were prepared with the Pb/(Pb+Zr+Ti) ratio of 0.5. Well-saturated and good square shape hysteresis loops with a large ferroelectricity of the remanent polarization (Pr) above 40 μC/cm2 were observed for all films. The Pr increased in the following order: (101)-, (111)- and (001)-orientations for the film with the Zr/(Zr+Ti) ratio of 0.42 and (100)-, (110)- and (111)-orientations for the Zr/(Zr+Ti) ratio of 0.68. On the other hand, the Ec value mainly depended on the Zr/(Zr+Ti) ratio and not on the orientation of the film, the Ec value of the film with a Zr/(Zr+Ti) ratio of 0.42 was larger than that of 0.68. The saturation behavior did not strongly depend on the orientation, especially for the films with the Zr/(Zr+Ti) ratio of 0.42. The (101)-oriented film with the Zr/(Zr+Ti) ratio of 0.42 and (100)- and (111)-oriented films with 0.68 did not show deterioration up to 1010 switching cycles
Keywords :
MOCVD; X-ray diffraction; dielectric hysteresis; dielectric polarisation; ferroelectric switching; ferroelectric thin films; lead compounds; Ec value; PZT; PbZrO3TiO3; SrRuO3-SrTiO3; coercive field; epitaxial PZT film; ferroelectric switching; ferroelectricity; metalorganic chemical vapor deposition; orientation dependence; remanent polarization; saturation behavior; square shape hysteresis loops; Chemical vapor deposition; MOCVD; Polarization; Shape; Solids; Sputtering; Substrates; Transistors; X-ray scattering; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
ISSN :
1099-4734
Print_ISBN :
0-7803-5940-2
Type :
conf
DOI :
10.1109/ISAF.2000.942476
Filename :
942476
Link To Document :
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