Title :
Evaluation of CSD-PZT thick films with different film density
Author :
Maki, K. ; Soyama, N. ; Mori, S. ; Ogi, K.
Author_Institution :
Sanda Plant, Mitsubishi Mater. Corp., Hyogo, Japan
Abstract :
Over-l-μm-thick PbZr0.52Ti0.48O3 (PZT) thick films with different film density were prepared on Pt/Ti/SiO2/Si substrates by means of chemical solution deposition (CSD). Stable propylene-glycol-based sol-gel solutions were used as the chemical solutions. We evaluated the microstructure, crystal orientation, leakage current density, ferroelectric properties and longitudinal strain properties of the films. The following results were obtained. With decreasing film density, the crystal form varied from columnar to granular, the crystal orientation changed from (111)-preferred to random, the leakage current density increased and the remanent polarization decreased. However the electrically induced strain hardly varied
Keywords :
X-ray diffraction; crystal orientation; density; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; internal stresses; lead compounds; leakage currents; sol-gel processing; CSD-PZT thick film; PZT; PbZrO3TiO3; Pt-Ti-SiO2-Si; Si; chemical solution deposition; columnar form; crystal orientation; electrically induced strain; ferroelectric properties; film density; granular form; leakage current density; longitudinal strain properties; microstructure; propylene-glycol-based sol-gel solutions; remanent polarization; Capacitive sensors; Chemicals; Crystal microstructure; Ferroelectric films; Ferroelectric materials; Leakage current; Polarization; Semiconductor films; Substrates; Thick films;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942477
