DocumentCode
3365799
Title
3-D simulation analysis of bipolar amplification in Planar Double-Gate and FinFET with independent gates
Author
Munteanu, Daniela ; Autran, Jean-Luc ; Moreau, Mathieu
Author_Institution
IM2NP, CNRS, Marseille, France
fYear
2008
fDate
10-12 Sept. 2008
Firstpage
280
Lastpage
283
Abstract
The bipolar amplification and charge collection of Planar Double-Gate and FinFET with independent gates is simulated. The transient response of independent gate devices is compared to that of conventional devices having the gates tied together.
Keywords
MOSFET; semiconductor device models; transient response; 3D simulation analysis; FinFET; bipolar amplification; charge collection; independent gate devices; planar double-gate; transient response; FinFETs; Logic gates; Numerical models; Radiation effects; Silicon; Three dimensional displays; Transient analysis; Double-Gate; FinFET; bipolar amplification; charge collection; heavy ion; independent gates; single event transient;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location
Jyvaskyla
ISSN
0379-6566
Print_ISBN
978-1-4577-0481-9
Type
conf
DOI
10.1109/RADECS.2008.5782727
Filename
5782727
Link To Document