Title :
3-D simulation analysis of bipolar amplification in Planar Double-Gate and FinFET with independent gates
Author :
Munteanu, Daniela ; Autran, Jean-Luc ; Moreau, Mathieu
Author_Institution :
IM2NP, CNRS, Marseille, France
Abstract :
The bipolar amplification and charge collection of Planar Double-Gate and FinFET with independent gates is simulated. The transient response of independent gate devices is compared to that of conventional devices having the gates tied together.
Keywords :
MOSFET; semiconductor device models; transient response; 3D simulation analysis; FinFET; bipolar amplification; charge collection; independent gate devices; planar double-gate; transient response; FinFETs; Logic gates; Numerical models; Radiation effects; Silicon; Three dimensional displays; Transient analysis; Double-Gate; FinFET; bipolar amplification; charge collection; heavy ion; independent gates; single event transient;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location :
Jyvaskyla
Print_ISBN :
978-1-4577-0481-9
DOI :
10.1109/RADECS.2008.5782727
