Title :
Preparation of Ir-based thin film electrodes by MOCVD
Author :
Shimizu, M. ; Kita, K. ; Fujisawa, H. ; Tomozawa, N. ; Niu, H.
Author_Institution :
Dept. of Electron., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
Ir and IrO2 thin films were successfully prepared on SiO2/Si at 275-450°C by metalorganic chemical vapor deposition (MOCVD) using a new Ir precursor, Ir(MeCp)(cod) and oxygen. In our MOCVD system, a conventional bubbling method was used, because this precursor is liquid and has a comparatively high vapor pressure. The obtained Ir films had mirror like surfaces (rms roughness : 1.4-20 μm) and low resistivity of 23-90 μQ·cm. These values are similar to those of the sputtered-Ir film prepared at 530°C. MOCVD-Ir films showed good step coverage of 70-80%. PZT capacitors with an MOCVD-Ir bottom electrode showed good ferroelectric properties
Keywords :
MOCVD; MOCVD coatings; X-ray diffraction; atomic force microscopy; electrical resistivity; electrochemical electrodes; iridium; metallic thin films; organic compounds; surface structure; 275 to 450 degC; Ir; Ir(MeCp)(cod); Ir-based thin film electrodes; MOCVD; MOCVD-Ir bottom electrode; MOCVD-Ir film; O2; PZT capacitors; Si; Si-SiO2-Ir; Si-SiO2-IrO2; conventional bubbling method; metalorganic chemical vapor deposition; mirror like surfaces; resistivity; sputtered-Ir film; step coverage; surface rms roughness; vapor pressure; Chemical vapor deposition; Electrodes; Ferroelectric films; MOCVD; Mirrors; Rough surfaces; Semiconductor thin films; Sputtering; Surface roughness; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942492
