Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)

Author

Barthelmess, R. ; Beuermann, M. ; Metzner, D. ; Schmidt, G. ; Westerholt, D. ; Winter, N. ; Gerstenmaier, Y.C. ; Reznik, D. ; Ruff, M. ; Schulze, H.-J. ; Willmeroth, A.

Author_Institution

Eupec GmbH, Pretzfeld, Germany

fYear

1998

fDate

3-6 Jun 1998

Firstpage

181

Lastpage

184

Abstract

Semi-insulating amorphous hydrogenated carbon layers are the key to use of the potential of the punchthrough design for high power semiconductors. The reduction of device thickness enables reduction of device losses with unchanged blocking capability. The concept is especially successful for GTO thyristors and their corresponding diodes, where new applications in the 5 to 500 MW range have emerged

Keywords

amorphous semiconductors; carbon; hydrogen; losses; passivation; power semiconductor diodes; thyristors; 5 to 50 MW; C:H; GTO thyristor diodes; GTO thyristors; a-C:H layers; blocking capability; device losses; device thickness; electroactive passivation; hydrogenated amorphous carbon layers; power semiconductor devices; power semiconductors; punchthrough design; semi-insulating amorphous hydrogenated carbon layers; Amorphous materials; Conductivity; Design optimization; Passivation; Power semiconductor devices; Schottky diodes; Semiconductor diodes; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702664

Filename

702664