3-bit, 8 GSPS flash ADC

Author

Baringer, Cynthia ; Jensen, Joe ; Burns, Larry ; Walden, Bob

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

64

Lastpage

67

Abstract

A 3-bit multi-Gigasamples/sec (Gs/s) flash analog-to-digital converter (ADC) for high-speed data acquisition systems is reported in this paper. Nyquist operation up to 8 Gs/s has been achieved. The quantizer can convert analog input signals beyond fs/2 up to fs at a sampling rate of 5 Gs/s. In addition, the converter can be operated up to 12.7 Gs/s when the input signal is at low frequencies. This ADC is fabricated in an AlInAs-GaInAs HBT process fabricated on InP substrates with an f_T of 75 GHz and f_max of 85 GHz

Keywords

III-V semiconductors; aluminium compounds; analogue-digital conversion; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; 3 bit; 75 GHz; 85 GHz; AlInAs-GaInAs; AlInAs-GaInAs HBT process; InP substrates; Nyquist operation; analog-to-digital converter; flash ADC; high-speed data acquisition systems; quantizer; Bandwidth; Breakdown voltage; DH-HEMTs; Frequency; Heterojunction bipolar transistors; Indium phosphide; Phase noise; Photonic band gap; Signal sampling; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491935

Filename

491935