Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

Author

Griffoni, Alessio ; Silvestri, Marco ; Gerardin, Simone ; Meneghesso, Gaudenzio ; Paccagnella, Alessandro ; Kaczer, Ben ; De Potter de ten Broeck, Muriel ; Verbeeck, Rita ; Nackaerts, Axel

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy

fYear

2008

fDate

10-12 Sept. 2008

Firstpage

432

Lastpage

437

Abstract

We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.

Keywords

CMOS integrated circuits; MOSFET; X-ray effects; integrated circuit interconnections; secondary electron emission; LDD spacers; X-rays; ad-hoc designed MOSFET; deep-submicron CMOS; deep-submicron MOSFET; dose enhancement; dose-enhancement effects; interconnects; metal layouts; transistor lateral isolation; Degradation; Layout; Logic gates; MOSFETs; Metals; Radiation effects; CMOS; dose enhancement; radiation hardness; total dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on

Conference_Location

Jyvaskyla

ISSN

0379-6566

Print_ISBN

978-1-4577-0481-9

Type

conf

DOI

10.1109/RADECS.2008.5782758

Filename

5782758