Properties of epitaxial AlN thin film deposited on sapphire substrate by ECR plasma

Author

Kaneko, Shin ; Ito, Takao ; Yasui, Motoaki ; Kurouchi, Masahito ; Nagano, Takeshi ; Torii, Hideyuki ; Amazawa, Takao ; Lee Seughwan ; Sungkyun Park ; Tikumasu, Takashi ; Takikawa, Hirofumi

Author_Institution

Kanagawa Ind. Technol. Center, Kanagawa Prefectural Gov., Ebina, Japan

fYear

2013

fDate

6-9 July 2013

Firstpage

69

Lastpage

70

Abstract

We prepared AlN film on c-plane sapphire substrate by electron cyclotron resonance plasma-enhanced sputtering deposition (ECR-sputtering). X-ray diffraction (XRD) verified the epitaxial growth of AlN films with the full width at half maximum (FWHM) of rocking curve of 0.04 deg. even on the film thickness of 100 nm. XRD also verified slight change of peak position from AlN film along both out of plane and in-plane directions.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; cyclotron resonance; plasma deposition; sapphire; semiconductor epitaxial layers; semiconductor growth; sputter deposition; wide band gap semiconductors; Al₂O₃; AlN; ECR-sputtering; FWHM; X-ray diffraction; XRD; c-plane sapphire substrate; electron cyclotron resonance plasma-enhanced sputtering deposition; epitaxial AlN thin film deposition property; epitaxial growth; full width at half maximum; Epitaxial growth; III-V semiconductor materials; Lattices; Photonic band gap; Plasmas; Substrates; Aluminam Nitridet; Crystal Structure; ECR-sputtering; Epitaxial; Wide Gap; first priciple theory; thin film; transmittancy;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on

Conference_Location

Hsinchu

Print_ISBN

978-1-4799-0464-8

Type

conf

DOI

10.1109/ICAIT.2013.6621498

Filename

6621498