Title :
Properties of epitaxial AlN thin film deposited on sapphire substrate by ECR plasma
Author :
Kaneko, Shin ; Ito, Takao ; Yasui, Motoaki ; Kurouchi, Masahito ; Nagano, Takeshi ; Torii, Hideyuki ; Amazawa, Takao ; Lee Seughwan ; Sungkyun Park ; Tikumasu, Takashi ; Takikawa, Hirofumi
Author_Institution :
Kanagawa Ind. Technol. Center, Kanagawa Prefectural Gov., Ebina, Japan
Abstract :
We prepared AlN film on c-plane sapphire substrate by electron cyclotron resonance plasma-enhanced sputtering deposition (ECR-sputtering). X-ray diffraction (XRD) verified the epitaxial growth of AlN films with the full width at half maximum (FWHM) of rocking curve of 0.04 deg. even on the film thickness of 100 nm. XRD also verified slight change of peak position from AlN film along both out of plane and in-plane directions.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; cyclotron resonance; plasma deposition; sapphire; semiconductor epitaxial layers; semiconductor growth; sputter deposition; wide band gap semiconductors; Al2O3; AlN; ECR-sputtering; FWHM; X-ray diffraction; XRD; c-plane sapphire substrate; electron cyclotron resonance plasma-enhanced sputtering deposition; epitaxial AlN thin film deposition property; epitaxial growth; full width at half maximum; Epitaxial growth; III-V semiconductor materials; Lattices; Photonic band gap; Plasmas; Substrates; Aluminam Nitridet; Crystal Structure; ECR-sputtering; Epitaxial; Wide Gap; first priciple theory; thin film; transmittancy;
Conference_Titel :
Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4799-0464-8
DOI :
10.1109/ICAIT.2013.6621498
