• DocumentCode
    3366324
  • Title

    60 GHz SiGe LNA

  • Author

    Do, Van-Hoang ; Subramanian, Viswanathan ; Boeck, Georg

  • Author_Institution
    TES Electron. Solutions, Berlin
  • fYear
    2007
  • fDate
    11-14 Dec. 2007
  • Firstpage
    1209
  • Lastpage
    1212
  • Abstract
    A monolithic low-noise-amplifier operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 mum SiGe BiCMOS technology, featuring npn transistors with fT and fmax ap 200 GHz. A two stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a gain of 18 dB at 61 GHz, which compare reasonably the simulated results. The circuit consumes 7.5 mA from a 2.7 V supply and active chip area is 0.45 mm2.
  • Keywords
    Ge-Si alloys; low noise amplifiers; semiconductor materials; transistors; HBT; SiGe; bandwidth 60 GHz; circuit; current 7.5 mA; gain; gain 18 dB; monolithic low-noise-amplifier; npn transistors; two stage cascode architecture; voltage 2.7 V; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Microwave technology; Millimeter wave technology; Noise figure; Silicon germanium; Transceivers; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
  • Conference_Location
    Marrakech
  • Print_ISBN
    978-1-4244-1377-5
  • Electronic_ISBN
    978-1-4244-1378-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2007.4511213
  • Filename
    4511213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3366324