Author :
Do, Van-Hoang ; Subramanian, Viswanathan ; Boeck, Georg
Author_Institution :
TES Electron. Solutions, Berlin
Abstract :
A monolithic low-noise-amplifier operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 mum SiGe BiCMOS technology, featuring npn transistors with fT and fmax ap 200 GHz. A two stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a gain of 18 dB at 61 GHz, which compare reasonably the simulated results. The circuit consumes 7.5 mA from a 2.7 V supply and active chip area is 0.45 mm2.
Keywords :
Ge-Si alloys; low noise amplifiers; semiconductor materials; transistors; HBT; SiGe; bandwidth 60 GHz; circuit; current 7.5 mA; gain; gain 18 dB; monolithic low-noise-amplifier; npn transistors; two stage cascode architecture; voltage 2.7 V; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Microwave technology; Millimeter wave technology; Noise figure; Silicon germanium; Transceivers; Transmission lines;
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
DOI :
10.1109/ICECS.2007.4511213
