Title :
The First All-Transistor Wideband (0 - 5GHz) Impedance Matching Network
Author :
Godara, Balwant ; Fabre, Alain
Author_Institution :
Inst. Superieur d´´Electron. de Paris (ISEP), Paris
Abstract :
The first active impedance matching circuit for RF applications is introduced. It adapts arbitrary output impedances to values between 50¿ and 250¿, from 0 to 5GHz, and occupies only 0.005mm2 in 0.35¿m SiGe-BiCMOS. It is vastly superior to traditional passive-element solutions by being: the first flexible matching circuit to adapt any impedance to any desired value; the smallest matching circuit ever; and a rare example of wideband matching. Application to a low-noise amplifier proves the potential of the new circuit.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; UHF amplifiers; impedance matching; semiconductor materials; RF applications; SiGe; SiGe-BiCMOS; all-transistor wideband; frequency 0 GHz to 5 GHz; impedance matching network; low-noise amplifier; matching circuit; size 0.35 mum; Circuit noise; Flexible printed circuits; Impedance matching; Noise figure; Radio frequency; Reflection; Scattering parameters; Temperature; Transformers; Wideband;
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
DOI :
10.1109/ICECS.2007.4511215
