1.55 μm p-i-n/HBT photoreceiver in a high-frequency optical phase-locked loop for stable dense wavelength division multiplexing channel offsets

Author

Goetz, P. ; Eisele, H. ; Syao, K. ; Bhattacharya, P.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

207

Abstract

In this work, an integrated p-i-n photoreceiver (PR) was employed in an optical phase-locked loop (OPLL) designed for producing stable channel offsets for extremely dense WDM systems. Wavelength separations from 3.00 to beyond 27.11 GHz were generated, representing the highest locking frequency reported for any heterodyne OPLL with semiconductor lasers. These offsets generated are well beyond the best values currently obtainable by passive filtering techniques

Keywords

bipolar integrated circuits; demodulation; integrated optoelectronics; optical modulation; optical phase locked loops; optical receivers; p-i-n photodiodes; photodetectors; stability; wavelength division multiplexing; extremely dense WDM systems; high-frequency optical phase-locked loop; integrated p-i-n photoreceiver; locking frequency; optical phase-locked loop; p-i-n/HBT photoreceiver; passive filtering techniques; semiconductor lasers; stable channel offsets; stable dense wavelength division multiplexing channel offsets; wavelength separations; Frequency; Heterojunction bipolar transistors; Integrated optics; Optical design; Optical filters; Optical mixing; PIN photodiodes; Phase locked loops; Ultraviolet sources; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630588

Filename

630588