Title :
Non-defective area analysis for quantifying yield impact
Author :
Ono, Makoto ; Iwata, Hisafumi ; Nemoto, Kazunori ; Watanabe, Kenji
Author_Institution :
Production Eng. Res. Lab., Hitachi Ltd., Japan
Abstract :
The present paper introduces a novel yield impact quantification method which is designed especially to have robustness to clustered defects and false detection by inspection tools. The yield impact can be obtained by non-defective area analysis of cumulative defect maps. The accuracy of the proposed method is discussed based on experimental results that were obtained using actual in-line inspection data. Application of the proposed method is contributing to rapid yield ramp-up
Keywords :
failure analysis; fault diagnosis; inspection; integrated circuit modelling; integrated circuit yield; LSI wafer fabrication; clustered defects; cumulative defect maps; false detection; inline inspection data; inspection tools; kill ratio analysis; nondefective area analysis; yield impact quantification method; Algorithm design and analysis; Circuits; Clustering algorithms; Failure analysis; Inspection; Laboratories; Manufacturing; Production; Robustness; Semiconductor device manufacture;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808754
