DocumentCode :
3367098
Title :
Capture rate enhancement method of 0.1 μm-level defects by pattern matching inspectors
Author :
Sakurai, Koichi ; Onoyama, A. ; Ishii, Hiroyuki ; Oka, Kazuhiro ; Yamanishi, Kenji
Author_Institution :
Manuf. Eng. Centre, Mitsubishi Electr. Corp., Hyogo, Japan
fYear :
1999
fDate :
1999
Firstpage :
131
Lastpage :
134
Abstract :
In this paper, a method of enhancing the capture rate of 0.1 μm-level defects by pattern matching inspectors is studied from the viewpoint of image variances. The inspection sensitivities are experimentally evaluated by using the detection rate of the defects on an actual device and also on the TEG. The image noise and the defect signal of the captured CCD images of the same defect are quantitatively analyzed. The observed image noise and the defect signal obey a normal distribution. The capture rate calculated by our model, based on a normal distribution, almost agrees with the experimental data. In addition, as an example of capture rate enhancing, a unique TEG called TWICE is demonstrated. By our method, defect inspection engineers can obtain the key factors for enhancing the capture rate of 0.1 pm-level defects on both actual devices and TEGs
Keywords :
CCD image sensors; fault diagnosis; image matching; inspection; integrated circuit testing; normal distribution; scanning electron microscopy; 0.1 μm-level defects; 0.1 mum; SEM images; TEG; TWICE; capture rate enhancement method; captured CCD images; defect detection rate; defect signal; gate array; image noise; image variances; inspection sensitivities; normal distribution; pattern matching inspectors; test element group; Charge coupled devices; Focusing; Gaussian distribution; Gray-scale; Inspection; Manufacturing; Pattern matching; Production facilities; Scattering; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1523-553X
Print_ISBN :
0-7803-5403-6
Type :
conf
DOI :
10.1109/ISSM.1999.808755
Filename :
808755
Link To Document :
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