• DocumentCode
    3367098
  • Title

    Capture rate enhancement method of 0.1 μm-level defects by pattern matching inspectors

  • Author

    Sakurai, Koichi ; Onoyama, A. ; Ishii, Hiroyuki ; Oka, Kazuhiro ; Yamanishi, Kenji

  • Author_Institution
    Manuf. Eng. Centre, Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    131
  • Lastpage
    134
  • Abstract
    In this paper, a method of enhancing the capture rate of 0.1 μm-level defects by pattern matching inspectors is studied from the viewpoint of image variances. The inspection sensitivities are experimentally evaluated by using the detection rate of the defects on an actual device and also on the TEG. The image noise and the defect signal of the captured CCD images of the same defect are quantitatively analyzed. The observed image noise and the defect signal obey a normal distribution. The capture rate calculated by our model, based on a normal distribution, almost agrees with the experimental data. In addition, as an example of capture rate enhancing, a unique TEG called TWICE is demonstrated. By our method, defect inspection engineers can obtain the key factors for enhancing the capture rate of 0.1 pm-level defects on both actual devices and TEGs
  • Keywords
    CCD image sensors; fault diagnosis; image matching; inspection; integrated circuit testing; normal distribution; scanning electron microscopy; 0.1 μm-level defects; 0.1 mum; SEM images; TEG; TWICE; capture rate enhancement method; captured CCD images; defect detection rate; defect signal; gate array; image noise; image variances; inspection sensitivities; normal distribution; pattern matching inspectors; test element group; Charge coupled devices; Focusing; Gaussian distribution; Gray-scale; Inspection; Manufacturing; Pattern matching; Production facilities; Scattering; Surfaces;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-5403-6
  • Type

    conf

  • DOI
    10.1109/ISSM.1999.808755
  • Filename
    808755