Title :
Cross-contamination control of new materials with minimum number of cleaning apparatuses
Author :
Wake, Tomoko ; Fukui, Kozo ; Hamada, Masayuki ; Inoue, Kcn ; Aoto, Nahomi
Author_Institution :
ULSI Device Dev. Lab., NEC, Kanagawa, Japan
Abstract :
We examined the cross-contamination of Co, a newly introduced metal, by measuring the concentration of Co that dissolved into cleaning and wet-process solutions and the concentration of Co that adsorbed on Si surfaces immersed in the solutions. We identified an optimized line-up of cleaning and wet-process equipment that can control Co cross-contamination with the minimum amount of cleaning and wet-process apparatus
Keywords :
chemical analysis; cobalt; dissolving; integrated circuit metallisation; surface cleaning; surface contamination; Co; Co concentration; Co metallization; Si; Si surfaces; ULSI fabrication; adsorbed Co concentration; cross-contamination control; dissolving; minimum cleaning apparatus; optimized line-up; wet-process solutions; Atomic measurements; Cleaning; Degradation; Fabrication; Inorganic materials; Laboratories; National electric code; Plasma measurements; Scanning probe microscopy; Ultra large scale integration;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808760
