Practical use of CMP process monitor in Cu polishing

Author

Kojima, Tadayuki ; Miyajima, Masaaki ; Akaboshi, F. ; Yogo, Toshiya ; Ishimoto, Satoshi

Author_Institution

Div. of Manuf. Eng., Fujitsu Labs. Ltd., Kawasaki, Japan

fYear

1999

fDate

1999

Firstpage

187

Lastpage

190

Abstract

We have developed a chemical mechanical polishing (CMP) process monitor which uses polishing vibration. The monitor enables us to accurately detect the polishing end point in copper (Cu) polishing, even when the conditions such as initial film thickness, slurry flow rate and polish rate are changed and when polishing multi-layered films. The processes and equipment can also be controlled as the monitor can detect abnormalities in the polishing conditions

Keywords

chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit manufacture; process control; process monitoring; vibration measurement; CMP process monitor; Cu polishing; chemical mechanical polishing; equipment control; initial film thickness; multi-layered films; peeling abnormality; polish rate; polishing condition abnormalities; polishing end point detection; polishing vibration; process control; slurry flow rate; vibration intensity change; vibration sensor; wafer slip abnormality; Acceleration; Chemical technology; Condition monitoring; Copper; Large Hadron Collider; Shape; Signal processing; Slurries; Tungsten; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808768

Filename

808768