Title :
Practical use of CMP process monitor in Cu polishing
Author :
Kojima, Tadayuki ; Miyajima, Masaaki ; Akaboshi, F. ; Yogo, Toshiya ; Ishimoto, Satoshi
Author_Institution :
Div. of Manuf. Eng., Fujitsu Labs. Ltd., Kawasaki, Japan
Abstract :
We have developed a chemical mechanical polishing (CMP) process monitor which uses polishing vibration. The monitor enables us to accurately detect the polishing end point in copper (Cu) polishing, even when the conditions such as initial film thickness, slurry flow rate and polish rate are changed and when polishing multi-layered films. The processes and equipment can also be controlled as the monitor can detect abnormalities in the polishing conditions
Keywords :
chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit manufacture; process control; process monitoring; vibration measurement; CMP process monitor; Cu polishing; chemical mechanical polishing; equipment control; initial film thickness; multi-layered films; peeling abnormality; polish rate; polishing condition abnormalities; polishing end point detection; polishing vibration; process control; slurry flow rate; vibration intensity change; vibration sensor; wafer slip abnormality; Acceleration; Chemical technology; Condition monitoring; Copper; Large Hadron Collider; Shape; Signal processing; Slurries; Tungsten; Very large scale integration;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808768
