Title :
MOS-gated three-terminal bi-directional switch
Author :
Dutta, R. ; Ajit, J.S. ; Kinzer, D.
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
A new three-terminal power switch is reported. The MOS-gated bi-directional device has forward and reverse conducting paths that utilize the same area, thus leading to significant savings in silicon space. A lightly doped N-base region supports the voltage in both the forward and reverse blocking states. A single MOS gate is used to control the current flow in both the forward and reverse directions
Keywords :
MOS-controlled thyristors; electric current; power semiconductor switches; semiconductor device models; MOS controlled thyristor structure; MOS-gated bi-directional device; MOS-gated three-terminal bi-directional switch; Si; SiO2-Si; emitter-switched thyristor structure; forward blocking state; forward conducting paths; forward current flow; lightly doped N-base region; reverse blocking state; reverse conducting paths; reverse current flow; silicon space savings; single MOS gate current flow control; three-terminal power switch; Anodes; Bidirectional control; Bridge circuits; Cathodes; MOSFETs; Rectifiers; Silicon; Switches; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702671
