MOS-gated three-terminal bi-directional switch

Author

Dutta, R. ; Ajit, J.S. ; Kinzer, D.

Author_Institution

Int. Rectifier Corp., El Segundo, CA, USA

fYear

1998

fDate

3-6 Jun 1998

Firstpage

213

Lastpage

216

Abstract

A new three-terminal power switch is reported. The MOS-gated bi-directional device has forward and reverse conducting paths that utilize the same area, thus leading to significant savings in silicon space. A lightly doped N-base region supports the voltage in both the forward and reverse blocking states. A single MOS gate is used to control the current flow in both the forward and reverse directions

Keywords

MOS-controlled thyristors; electric current; power semiconductor switches; semiconductor device models; MOS controlled thyristor structure; MOS-gated bi-directional device; MOS-gated three-terminal bi-directional switch; Si; SiO₂-Si; emitter-switched thyristor structure; forward blocking state; forward conducting paths; forward current flow; lightly doped N-base region; reverse blocking state; reverse conducting paths; reverse current flow; silicon space savings; single MOS gate current flow control; three-terminal power switch; Anodes; Bidirectional control; Bridge circuits; Cathodes; MOSFETs; Rectifiers; Silicon; Switches; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702671

Filename

702671