New ultra-precision CMP technique applying direct air-back method and non-foaming plastic pad

Author

Doy, Toshiroh Karaki ; Sakai, Kenji ; Jeong, Heado ; Ohmori, Hitoshi ; Kasai, Toshio

Author_Institution

Fac. of Educ., Saitama Univ., Urawa, Japan

fYear

1999

fDate

1999

Firstpage

225

Lastpage

228

Abstract

For the realization of planarization polishing (CMP) technology of wafer surfaces in ULSI fabrication, a direct air back method and polishing pads with a spirally V-shaped groove formed over the non-foaming hard plastic were developed and used to study the uniform polishing characteristics of SiO₂ films (1 μm thick) formed by CVD over 6" silicon wafers. The results showed excellent uniformity of planarization polishing with the remaining film thickness variation below 520±10 nm, which is far superior to that of conventional techniques

Keywords

ULSI; chemical mechanical polishing; integrated circuit manufacture; process control; thickness control; 1 mum; 6 inch; Si; Si wafers; SiO₂ CVD films; SiO₂-Si; ULSI fabrication; direct air-back method; film thickness variation; nonfoaming hard plastic; nonfoaming plastic pad; planarization polishing technology; polishing pads; spirally V-shaped groove; ultra-precision CMP technique; uniform polishing characteristics; wafer surfaces; Atherosclerosis; Chemical engineering; Chemical processes; Chemical technology; Fabrication; Large scale integration; Planarization; Plastics; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808777

Filename

808777