Title :
New ultra-precision CMP technique applying direct air-back method and non-foaming plastic pad
Author :
Doy, Toshiroh Karaki ; Sakai, Kenji ; Jeong, Heado ; Ohmori, Hitoshi ; Kasai, Toshio
Author_Institution :
Fac. of Educ., Saitama Univ., Urawa, Japan
Abstract :
For the realization of planarization polishing (CMP) technology of wafer surfaces in ULSI fabrication, a direct air back method and polishing pads with a spirally V-shaped groove formed over the non-foaming hard plastic were developed and used to study the uniform polishing characteristics of SiO2 films (1 μm thick) formed by CVD over 6" silicon wafers. The results showed excellent uniformity of planarization polishing with the remaining film thickness variation below 520±10 nm, which is far superior to that of conventional techniques
Keywords :
ULSI; chemical mechanical polishing; integrated circuit manufacture; process control; thickness control; 1 mum; 6 inch; Si; Si wafers; SiO2 CVD films; SiO2-Si; ULSI fabrication; direct air-back method; film thickness variation; nonfoaming hard plastic; nonfoaming plastic pad; planarization polishing technology; polishing pads; spirally V-shaped groove; ultra-precision CMP technique; uniform polishing characteristics; wafer surfaces; Atherosclerosis; Chemical engineering; Chemical processes; Chemical technology; Fabrication; Large scale integration; Planarization; Plastics; Silicon; Ultra large scale integration;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808777
