DocumentCode :
3367531
Title :
Run-to-run control of CMP process considering aging effects of pad and disc
Author :
Chen, Argon ; Guo, Ruey-Shan ; Chou, Y.L. ; Lin, C.L. ; Dun, Jowei ; Wu, S.A.
Author_Institution :
Graduate Inst. of Ind. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
1999
fDate :
1999
Firstpage :
229
Lastpage :
232
Abstract :
CMP processes are known to be erratic and unstable. A simple control strategy is to predict the run-to-run process removal rate and then adjust the processing time based on the prediction. EWMA and PCC techniques are two most often used prediction techniques. In this work, we revise the PCC design to take into account the ages of the abrasive pad and conditioning disc. It is shown that the proposed age-based technique can significantly improve the prediction capability and, thus, the control efficiency over conventional techniques
Keywords :
ageing; chemical mechanical polishing; integrated circuit manufacture; moving average processes; predictive control; predictor-corrector methods; process control; CMP process; EWMA; PCC design; abrasive pad; conditioning disc; control efficiency; control strategy; disc aging effects; exponentially weighted moving average statistic; global planarization; pad aging effects; prediction capability; predictor corrector control; processing time; run-to-run control; run-to-run process removal rate; Abrasives; Aging; Atherosclerosis; Chemical technology; Planarization; Process control; Rough surfaces; Semiconductor process modeling; Statistics; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1523-553X
Print_ISBN :
0-7803-5403-6
Type :
conf
DOI :
10.1109/ISSM.1999.808778
Filename :
808778
Link To Document :
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