DocumentCode
3367566
Title
Engineering to the least process monitoring
Author
Woolverton, Amanda ; Chu, James ; Freiberger, Phil ; Stewart, Edward ; Wong, Alexander ; Engelhard, Christoph ; Amick, R. ; Dhar, V.
fYear
1999
fDate
11-13 Oct. 1999
Firstpage
237
Lastpage
240
Abstract
To achieve both goals of drastically reducing process monitoring and maintaining high product quality, CTM/D2 (California Technology and Manufacturing Group) at Intel has taken a new approach in monitor reduction in the 0.25 /spl mu/m Flash technology development and manufacturing. D2´s new methodology stems from a fundamental mindset shift to a new paradigm: Engineering to the Least Process Monitoring. Intensive process monitoring only reflects deficiencies of quality in the process design. Without eliminating root causes, any monitor reduction will be limited and transitory. By the end of 1998, D2´s new initiatives resulted in a 50% reduction in monitor cost per wafer, setting a new benchmark of cost effectiveness for flash technology manufacturing at Intel. Despite the aggressive monitor restrictions, D2 was able to meet the Flash technology certification goal on schedule. In addition, both line yield and die yield of the 0.25 /spl mu/m Flash technology reached record highs by the end of 1998. These records are unprecedented in Flash manufacturing at Intel.
Keywords
certification; flash memories; integrated circuit economics; integrated circuit yield; process monitoring; quality control; 0.25 mum; D2 methodology; Flash manufacturing; Intel; certification goal; die yield; flash technology manufacturing; high product quality; least process monitoring; line yield; monitor cost reduction; process monitoring reduction; quality maintenance; Costs; Design engineering; Logic; Maintenance engineering; Metrology; Microprocessors; Monitoring; Production; Stability; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location
Santa Clara, CA, USA
ISSN
1523-553X
Print_ISBN
0-7803-5403-6
Type
conf
DOI
10.1109/ISSM.1999.808780
Filename
808780
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