Title :
A millimeter wave active load-pull measurement system
Author :
Ghannouchi, Fadhel M. ; Bosisio, Renato G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
Abstract :
A millimeter wave active load-pull measurement system for large signal characterization of millimeter wave transistors is presented. The characterization system uses two six-port junctions for simultaneous impedance and power flow measurements. The advantages of the proposed measurement system are summarized. Large signal characterization of a GaAs FET at 28 GHz in terms of constant absorbed power contours, constant operating gain contours, and constant DC drain current contours in the complex ΓL plane are presented
Keywords :
electric impedance measurement; field effect transistors; microwave reflectometry; power measurement; power transistors; solid-state microwave devices; 28 GHz; FET; GaAs; active load-pull measurement system; constant DC drain current contours; constant absorbed power contours; constant operating gain contours; impedance measurement; large signal characterization; microwave transistors; millimeter wave transistors; power amplifiers; power flow measurements; simultaneous measurement; six-port junctions; Envelope detectors; Fluid flow measurement; Frequency; Impedance measurement; Load flow; Microwave FETs; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Power measurement;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1992. IMTC '92., 9th IEEE
Conference_Location :
Metropolitan, NY
Print_ISBN :
0-7803-0640-6
DOI :
10.1109/IMTC.1992.245110
