Trajectory split method for Monte Carlo simulation of ion implantation demonstrated by three-dimensional poly-buffered LOCOS field oxide corners

The benefits of an acceleration method for two and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is demonstrated by three-dimensional poly-buffered LOCOS field oxide corners. The “trajectory split method” ensures a much better statistical representation in regions with a dopant concentration several orders of magnitudes smaller than the maximum. As a result the time required to perform a simulation with comparable statistical accuracy is drastically reduced