Title :
A new gas circulation RIE
Author :
Ohiwa, Tokuliisa ; Sakai, Itsukii ; Okumura, Katsuya
Author_Institution :
Microelectron. Eng. Labs., Toshiba Corp., Yokohama, Japan
Abstract :
A new gas circulation RIE has been developed. It pumps the exhausted gas still containing usable process gas into the RIE process chamber to be reused. This new gas circulation RIE showed equivalent etching performances of etch rate, selectivity to Si, etching profile, and uniformity in C4F8/CO/Ar contact hole etching process compared to the conventional process, with 50% less C4F8 and 80% less CO and Ar, of the original input gas flow rates. The reduction of the use of per-fluoro compound (PFC) and other process gases is effective for the suppression of the greenhouse problem and etching process cost
Keywords :
air pollution; integrated circuit manufacture; large scale integration; sputter etching; contact hole etching process; equivalent etching performances; etch rate; etching profile; gas circulation RIE; greenhouse problem; process cost; process gases; uniformity; usable process gas; Costs; Etching; Fabrication; Global warming; Large scale integration; Microelectronics; Plasma applications; Power engineering and energy; Semiconductor films; Thigh;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808785
