Automatic characterization and modeling of microwave low noise HEMTs

Author

Caddemi, A. ; Martines, G. ; Sannino, M.

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

fYear

1992

fDate

12-14 May 1992

Firstpage

385

Lastpage

388

Abstract

An automated measuring system is presented which allows the simultaneous characterization of microwave transistors in terms of noise and scattering parameters by means of noise figure measurements only. Very low time consumption, repeatability and accuracy characterize the system. The setup is driven by original software which selects the best measuring conditions for accuracy and performs the measurements and data processing routines without any action on the part of the operator. The testing of 32 samples of HEMTs in the 8-12 GHz frequency range is accomplished before and after 300 h of storage at 200°C. The model of the typical device of each series is extracted by means of the noise and scattering parameter sets which have been obtained

Keywords

S-parameters; computerised instrumentation; electric noise measurement; electron device noise; high electron mobility transistors; microwave reflectometry; semiconductor device models; semiconductor device testing; solid-state microwave devices; 200 degC; 300 hours; 8 to 12 GHz; accuracy; automated measuring system; microwave low noise HEMTs; microwave transistors; modeling; noise figure measurements; repeatability; scattering parameters; Data processing; Microwave measurements; Microwave transistors; Noise figure; Noise measurement; Performance evaluation; Scattering parameters; Software measurement; Software performance; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1992. IMTC '92., 9th IEEE

Conference_Location

Metropolitan, NY

Print_ISBN

0-7803-0640-6

Type

conf

DOI

10.1109/IMTC.1992.245112

Filename

245112