Title :
Ion damage propagation in dry-etched InP-based structures
Author :
Hu, E.L. ; Yu, D.G. ; Chen, C.H. ; Keller, B.P. ; Holmes, A.L., Jr. ; DenBaars, S.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The high spatial resolution, controlled etch profiles and uniformity of etching that is achievable with ion-assisted etch processes appear to be counterbalanced with ion-induced defects introduced into the material. We describe assessments of such damage introduced into InP, and propagated into material structures regrown onto those InP substrates. Particular etch chemistries, effective for patterning InP, may have capabilities of mitigating ion-generated defects
Keywords :
III-V semiconductors; crystal defects; indium compounds; sputter etching; surface chemistry; surface structure; InP; controlled etch profiles; damage; dry-etched InP-based structures; etch chemistries; etching; high spatial resolution; ion damage propagation; ion-assisted etch processes; ion-generated defects; ion-induced defects; patterning; uniformity; Argon; Chemical technology; Chemistry; Dry etching; Hydrogen; Indium phosphide; Optical materials; Optical waveguides; Spatial resolution; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491946
