DocumentCode :
3367809
Title :
Improving throughput in 0.25 /spl mu/m technology development and manufacturing - CVD TiN liner barrier applications
Author :
Brennan, B. ; Rivera, W. ; Christian, C. ; Kin Sang Lam ; Pursley, C.
Author_Institution :
Adv. Micro Devices Inc., Austin, TX, USA
fYear :
1999
fDate :
11-13 Oct. 1999
Firstpage :
313
Lastpage :
316
Abstract :
During 0.25 /spl mu/m process development and transfer, functional yields were not obtained until the CVD TiN liner barrier process applications were used at five of the six barrier-levels. The process transfer and capital equipment plan did not comprehend this required technology improvement, resulting in these CVD TiN tools becoming a constraint. Aggressive capital equipment installations and manufacturing technology initiatives were implemented to provide the needed capacity to support the ramp plan. Integrated CVD TiN focus teams were sanctioned and chartered to improve the operation productivity. These efforts and results eliminated this tool set from becoming a technology or capacity constraint.
Keywords :
CVD coatings; integrated circuit manufacture; integrated circuit metallisation; titanium compounds; 0.25 micron; CVD TiN liner barrier applications; CVD TiN tools; TiN; capital equipment installations; constraint elimination; integrated CVD TiN focus teams; manufacturing technology initiatives; manufacturing throughput improvement; one-quarter micron process manufacturing; one-quarter micron process technology development; operation productivity improvement; Acceleration; Atherosclerosis; Hardware; Inorganic materials; Manufacturing processes; Production; Productivity; Throughput; Tin; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA, USA
ISSN :
1523-553X
Print_ISBN :
0-7803-5403-6
Type :
conf
DOI :
10.1109/ISSM.1999.808798
Filename :
808798
Link To Document :
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