DocumentCode
3367809
Title
Improving throughput in 0.25 /spl mu/m technology development and manufacturing - CVD TiN liner barrier applications
Author
Brennan, B. ; Rivera, W. ; Christian, C. ; Kin Sang Lam ; Pursley, C.
Author_Institution
Adv. Micro Devices Inc., Austin, TX, USA
fYear
1999
fDate
11-13 Oct. 1999
Firstpage
313
Lastpage
316
Abstract
During 0.25 /spl mu/m process development and transfer, functional yields were not obtained until the CVD TiN liner barrier process applications were used at five of the six barrier-levels. The process transfer and capital equipment plan did not comprehend this required technology improvement, resulting in these CVD TiN tools becoming a constraint. Aggressive capital equipment installations and manufacturing technology initiatives were implemented to provide the needed capacity to support the ramp plan. Integrated CVD TiN focus teams were sanctioned and chartered to improve the operation productivity. These efforts and results eliminated this tool set from becoming a technology or capacity constraint.
Keywords
CVD coatings; integrated circuit manufacture; integrated circuit metallisation; titanium compounds; 0.25 micron; CVD TiN liner barrier applications; CVD TiN tools; TiN; capital equipment installations; constraint elimination; integrated CVD TiN focus teams; manufacturing technology initiatives; manufacturing throughput improvement; one-quarter micron process manufacturing; one-quarter micron process technology development; operation productivity improvement; Acceleration; Atherosclerosis; Hardware; Inorganic materials; Manufacturing processes; Production; Productivity; Throughput; Tin; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location
Santa Clara, CA, USA
ISSN
1523-553X
Print_ISBN
0-7803-5403-6
Type
conf
DOI
10.1109/ISSM.1999.808798
Filename
808798
Link To Document