DocumentCode :
3368043
Title :
Stacking order impact on overall 3D die-to-wafer Stacked-IC cost
Author :
Taouil, Mottaqiallah ; Hamdioui, Said
Author_Institution :
Comput. Eng. Lab., Delft Univ. of Technol., Delft, Netherlands
fYear :
2011
fDate :
13-15 April 2011
Firstpage :
335
Lastpage :
340
Abstract :
Three-dimensional Stacked IC (3D-SIC) is a promising technology gaining a lot of attention by industry. Such technology promises lower latency, lower power consumption and a smaller footprint as compared to planar ICs. Reducing the overall 3D-SIC manufacturing cost is a major challenge driving the industry. The process of stacking the dies together is an integral part of 3D-SIC manufacturing process; hence, it impacts the overall cost. This paper introduces out-of-order stacking and compares it with the conventional in-order stacking from cost point of view. In-order stacking restricts the stacking of the dies in a bottom-up sequential order, while out-of-order stacking poses no restrictions and the order is free as long as it is realistic. The simulation results show that out-of-order stacking ends up in lower cost than in-order stacking, and that the difference increases for larger stack sizes and lower stacking yield. For example, our case study shows that for a 3D-SIC with a stack size of 6 layers, out-of-order stacking outperforms the in-order one with up to 6% using the optimal test flow.
Keywords :
integrated circuit economics; integrated circuit manufacture; integrated circuit testing; three-dimensional integrated circuits; wafer level packaging; 3D SIC manufacturing process; 3D die-to-wafer stacked IC cost; in-order stacking; out-of-order stacking; stacking order; Bonding; Out of order; Packaging; Stacking; Testing; Three dimensional displays; 3D manufacturing cost; 3D stacking; 3D test cost; 3D test flow; Die-to-Wafer stacking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2011 IEEE 14th International Symposium on
Conference_Location :
Cottbus
Print_ISBN :
978-1-4244-9755-3
Type :
conf
DOI :
10.1109/DDECS.2011.5783107
Filename :
5783107
Link To Document :
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