DocumentCode :
3368044
Title :
First silicon experiments within wafers
Author :
Heavlin, William D.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear :
1999
fDate :
1999
Firstpage :
375
Lastpage :
378
Abstract :
Typical industrial practice blocks experiments by lot and treats wafers as homogeneous units. This work demonstrates the practical advantages of varying some factors within wafer. The case study involves an advanced microprocessor, the response of greatest interest is speed, and its critical gate lengths are manipulated by exposure changes within wafer. The experiment is constructed using a spatial design criterion and a constrained optimal design algorithm. Data analysis has 3 steps: (a) for each wafer, model the response as a function of both within-wafer factors and (x,y) coordinates. (b) For each wafer and factor level, average over all site coordinates and other factor levels. (c) across wafers, fit a response surface. An example illustrates, and several practical issues are highlighted
Keywords :
circuit optimisation; elemental semiconductors; integrated circuit design; integrated circuit manufacture; microprocessor chips; silicon; surface fitting; Si; advanced microprocessor; constrained optimal design algorithm; critical gate lengths; exposure changes; factor levels; homogeneous units; response surface; site coordinates; spatial design criterion; within-wafer factors; Algorithm design and analysis; Circuits; Design for experiments; Implants; Ion implantation; Microprocessors; Resists; Response surface methodology; Semiconductor device modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1523-553X
Print_ISBN :
0-7803-5403-6
Type :
conf
DOI :
10.1109/ISSM.1999.808814
Filename :
808814
Link To Document :
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