Title :
A newly developed cooling system using hydrogenated water
Author :
Yamazaki, Yoshio ; Yokoi, Ikunori ; Abe, Toshikazu ; Ii, Toshihiro ; Hirayama, Masaki ; Ohmi, Tadahiro
Author_Institution :
Dept. of Electr. Eng., Tohoku Univ., Sendai, Japan
Abstract :
This paper presents the copper oxidation and flowing out characteristics inside copper pipe line, which is a candidate for future cooling water pipe line, with various species of dissolved gases in cooling water. The result reveals that copper oxidation rate in air saturated ultrapure water is much faster than other conditions, whereas its rate in hydrogenated ultrapure water is not differentiated from that in de-aerated ultrapure water. However, the amount of copper flowed out from the pipe surface is drastically reduced by using hydrogenated ultrapure water. The data indicate that copper in neutral pH solution with the oxidation reduction potential (ORP) value of 400 mV such as hydrogenated ultrapure water is perfectly stable for surface oxidation. As a cooling water has many kinds of advantages: it is not necessary to use chemicals as anti-corrosive agents; there is no cooling efficiency degradation by oxidation inside pipe line surface, and a “maintenance-free system” can be realised. A newly developed cooling system using hydrogenated ultrapure water is applicable to other industry facilities as well as semiconductor fabrication with major benefits in terms of the “industrial cost” and “the environmental issues”
Keywords :
cooling; environmental factors; integrated circuit economics; oxidation; 400 mV; cooling system; cooling water pipe line; dissolved gases; environmental issues; flowing out characteristics; hydrogenated water; industrial cost; maintenance-free system; oxidation reduction potential; semiconductor fabrication; ultrapure water; Conductivity; Construction industry; Cooling; Copper; Costs; Data engineering; Oxidation; Silicon; Steel; Water;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808825