Title :
High-throughput low temperature tungsten deposition process for 0.25 μm technology
Author :
Elst, W. ; Van Zomeren, A. ; Berenbaum, D. ; Roede, H. ; Schmitz, J. ; Ellwanger, R.
Author_Institution :
MOS4YOU Dept., Philips Semicond., Nijmegen, Netherlands
Abstract :
A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed. Therefore, this process is particularly suitable for post W-CMP processing, as plug seam attack will be minimal. Electrical measurements have demonstrated that this new process has the same process capability in terms of electrical performance and yield
Keywords :
chemical vapour deposition; integrated circuit manufacture; integrated circuit metallisation; tungsten; 0.25 micron; 300 torr; 425 C; W; high pressure process; high-throughput deposition process; low temperature W deposition process; post W-CMP processing; step coverage; Large Hadron Collider; Optical films; Optical microscopy; Plugs; Pollution measurement; Scanning electron microscopy; Semiconductor materials; Stress measurement; Temperature; Tungsten;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808827
