Title :
InP-based IC technologies for 100-Gbit/s and beyond
Author :
Murata, Koichi ; Sano, Kimikazu ; Enoki, Takatomo ; Sugahara, Hirohiko ; Tokumitsu, Masami
Author_Institution :
NTT Photonics Lab., NTT Corp., Kanagawa, Japan
fDate :
31 May-4 June 2004
Abstract :
The research and development of InP-based devices and integrated circuits (ICs) are driven by applications in millimeter-wave wireless and broadband optical fiber communications systems. This paper describes recent progress in our InP-based HEMT and HBT devices, IC and optoelectronic IC (OEIC) technologies, measurement instruments, and discusses technical issues for future 100-Gbit/s class optical communication IC technologies.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; high-speed integrated circuits; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; optical fibre communication; 100 Gbit/s; HBT devices; InP; InP-based HEMT; OEIC; broadband optical fiber communications systems; integrated circuits; measurement instruments; millimeter-wave wireless communication systems; optical communication IC technologies; optoelectronic IC; Application specific integrated circuits; Broadband communication; Integrated circuit technology; Millimeter wave communication; Millimeter wave integrated circuits; Millimeter wave measurements; Millimeter wave technology; Optical fiber communication; Photonic integrated circuits; Research and development;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442599
