Title :
Optimization of conditions of Ta2O5/rugged Si capacitor process applied to high-density DRAMs using sub-0.2 μm process
Author :
Yoshida, T. ; Yamaguchi, K. ; Furukawa, R. ; Yamamoto, H. ; Honma, T. ; Ishizaka, M. ; Uchino, T. ; Uchiyama, H. ; Iijima, S. ; Ohji, Y.
Author_Institution :
Semicond. & Integrated Circuits, Hitachi Ltd., Tokyo, Japan
Abstract :
We optimized rugged Si, phosphorus doping process, Ta2O 5 deposition and crystallization of amorphous Ta2O 5. Our investigation confirmed that Ta2O5 /rugged Si capacitor has good pause refresh characteristic and superior TDDB lifetime enabling volume production of high density DRAMs
Keywords :
DRAM chips; MOS capacitors; MOS memory circuits; elemental semiconductors; integrated circuit reliability; semiconductor device breakdown; silicon; tantalum compounds; 0.2 micron; MOS capacitors; TDDB lifetime; Ta2O5-Si; high-density DRAMs; pause refresh characteristic; volume production; Amorphous materials; Amorphous silicon; Capacitance; Capacitors; Crystallization; Degradation; Doping profiles; Electrodes; Semiconductor films; Temperature dependence;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808831
