Title :
The development of batch type low pressure spin dryer for water mark-less wafers
Author :
Maeda, Kazuaki ; Okuchi, H. ; Nadahara, Soichi ; Okumura, Katsuya ; Muraoka, Yusuke
Author_Institution :
EBARA Corp., Toshiba Corp., Japan
Abstract :
We developed a novel spin dryer, which is equipped with high speed rotation capability and a low pressure N2 purging system, to realize a water mark free surface. Water marks which remained on the Si wafer surface were made by chemical reaction of Si, O2, and H 2O during spin drying. In this paper, two experimental approaches: (1) to remove O2 from the reaction elements; and (2) to minimize reaction time, were demonstrated. The low pressure, high speed spin dryer with shower rinsing suppressed water marks significantly, i.e. only 500 ppm, compared with that of a conventional one
Keywords :
drying; integrated circuit manufacture; silicon; surface treatment; H2O; N2; O2; O2 removal; Si; Si wafer surface; batch type spin dryer; high speed rotation capability; low pressure N2 purging system; low pressure spin dryer; reaction time minimisation; shower rinsing; water mark free surface; water mark-less wafers; Chemical elements; Cleaning; Contamination; Control systems; Pressure control; Servomechanisms; Servomotors; Silicon; Temperature control; Water pollution;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808833
