High performance of W-band MMICs using 60 nm InGaAs HEMT technology

Author

Kim, S. ; Song, S. ; Choi, W. ; Lee, S. ; Ko, W. ; Kwon, Y. ; Seo, K.

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2004

fDate

31 May-4 June 2004

Firstpage

20

Lastpage

23

Abstract

A W-band coplanar wave-guide MMIC (a mixer, an oscillator and an ultra broad-band distributed amplifier) has been successfully developed by 60 nm gate length InGaAs HEMT technology. 60 nm gate length was defined by Si₃N₄/SiO₂ sidewall process. The device exhibits good DC and microwave characteristics of V_th = -0.65 V, breakdown voltage = -4.1 V, extrinsic G_m,max = 1.15 S/mm, f_T= 250 GHz and f_max of 263 GHz. A mixer exhibits conversion loss of 7 dB with 94 GHz LO signal and 90 GHz RF signal. An oscillator exhibits output power of -4 dB at 96 GHz. A broadband distributed amplifier achieves small signal gain of 6.6 dB over 0.4∼110 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC mixers; MMIC oscillators; coplanar waveguides; distributed amplifiers; gallium arsenide; high electron mobility transistors; indium compounds; wideband amplifiers; -0.65 V; -4.1 V; 250 GHz; 263 GHz; 6.6 dB; 60 nm; 7 dB; 90 GHz; 94 GHz; 96 GHz; HEMT technology; InGaAs; LO signal; RF signal; Si₃N₄-SiO₂; W-band coplanar waveguide MMIC; breakdown voltage; conversion loss; microwave characteristics; mixer; oscillator; ultrabroad-band distributed amplifier; Distributed amplifiers; Gain; HEMTs; Indium gallium arsenide; MMICs; Microwave devices; Oscillators; Power amplifiers; Power generation; RF signals;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442601

Filename

1442601