Title :
Static induction emitter diode (SIED)
Author :
Yura, Masashi ; Nishizawa, Jun-ichi
Author_Institution :
Toyo Electr. Manuf. Co. Ltd., Kanagawa, Japan
Abstract :
A new concept for a fast recovery diode is presented. It is necessary to optimize both the anode and cathode structures in order to realize compatibility of the high reverse voltage, the low forward voltage drop, and the fast and soft reverse recovery characteristics. Based on this concept, the static induction emitter diode (SIED) has been developed. In this paper, the operating mechanism of the SIED is described using simulation and experimental results
Keywords :
anodes; cathodes; optimisation; power semiconductor diodes; semiconductor device models; semiconductor device testing; SIED; SIED operating mechanism; anode structure optimization; cathode structure optimization; fast recovery diode; fast reverse recovery characteristics; forward voltage drop; reverse voltage; simulation; soft reverse recovery characteristics; static induction emitter diode; Anodes; Cathodes; Circuits; Epitaxial growth; Epitaxial layers; Low voltage; Ohmic contacts; Schottky diodes; Semiconductor diodes; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702676
