Title :
Origin of non-radiative center of GaInNAs grown by MOVPE
Author :
Yamada, T. ; Ishizuka, T. ; Sawamura, A. ; Iguchi, Y. ; Saito, T. ; Katsuyama, T. ; Takagishi, S. ; Nomura, K. ; Nakayama, M.
Author_Institution :
Transmission Devices R&D Lab., Sumitomo Electr. Ind. Ltd., Hyogo, Japan
fDate :
31 May-4 June 2004
Abstract :
The origins of non-radiative centers of GaInNAs grown by metalorganic vapor phase epitaxy (MOVPE) are discussed. The relations of the photoluminescence (PL) efficiency to the carrier localization and the N-H bonding for as-grown and annealed GaInNAs have been investigated, and we found two possibilities as the origins of non-radiative centers of GaInNAs grown by MOVPE. One is the spatial inhomogeneity of N, and the other is the N-H bond.
Keywords :
III-V semiconductors; MOCVD; annealing; gallium arsenide; gallium compounds; indium compounds; localised states; photoluminescence; semiconductor epitaxial layers; semiconductor growth; thermo-optical effects; vapour phase epitaxial growth; GaInNAs; MOVPE; N-H bonding; carrier localization; metalorganic vapor phase epitaxy; nonradiative center; photoluminescence efficiency; spatial inhomogeneity; Annealing; Bonding; Epitaxial growth; Epitaxial layers; Fluctuations; Metals industry; Optical filters; Optical pumping; Optical sensors; Photoluminescence;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442605
