• DocumentCode
    3368576
  • Title

    The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

  • Author

    Saito, A. ; Miyamoto, T. ; Kawaguchi, M. ; Koyama, F.

  • Author_Institution
    Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    56
  • Lastpage
    59
  • Abstract
    The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
  • Keywords
    III-V semiconductors; MOCVD; annealing; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; spectral line shift; GaInNAs-GaAs; blue shift; current annealing; metalorganic chemical vapor deposition; thermal annealing; threshold current density; threshold current reduction; wavelength shift; Annealing; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Pulse measurements; Pulsed laser deposition; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442610
  • Filename
    1442610