DocumentCode
3368576
Title
The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition
Author
Saito, A. ; Miyamoto, T. ; Kawaguchi, M. ; Koyama, F.
Author_Institution
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear
2004
fDate
31 May-4 June 2004
Firstpage
56
Lastpage
59
Abstract
The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
Keywords
III-V semiconductors; MOCVD; annealing; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; spectral line shift; GaInNAs-GaAs; blue shift; current annealing; metalorganic chemical vapor deposition; thermal annealing; threshold current density; threshold current reduction; wavelength shift; Annealing; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Pulse measurements; Pulsed laser deposition; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442610
Filename
1442610
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