DocumentCode :
3368576
Title :
The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition
Author :
Saito, A. ; Miyamoto, T. ; Kawaguchi, M. ; Koyama, F.
Author_Institution :
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
56
Lastpage :
59
Abstract :
The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
Keywords :
III-V semiconductors; MOCVD; annealing; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; spectral line shift; GaInNAs-GaAs; blue shift; current annealing; metalorganic chemical vapor deposition; thermal annealing; threshold current density; threshold current reduction; wavelength shift; Annealing; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Pulse measurements; Pulsed laser deposition; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442610
Filename :
1442610
Link To Document :
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