Static induction type power rectifier

Author

Yano, Koji ; Henmi, Isao ; Obara, Hideyasu ; Kasuga, Masanobu ; Shimizu, Azuma

Author_Institution

Yamanashi Univ., Kofu, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

237

Lastpage

240

Abstract

For application of a static induction type rectifier to a low voltage power rectifier and a high voltage rectifier, a lateral SOI structure and a P-type channel structure are proposed, respectively. Design methods for these structures are considered by device simulations. The simulations focus on optimization of the thickness of the buried oxide layer for the lateral SOI structure, and on the dosage of the channel for the P-type channel structure, respectively

Keywords

buried layers; doping profiles; high-voltage techniques; optimisation; power semiconductor diodes; semiconductor device models; silicon-on-insulator; solid-state rectifiers; P-type channel structure; Si-SiO₂; buried oxide layer thickness optimization; channel dosage; design methods; device simulations; high voltage rectifier; lateral SOI structure; low voltage power rectifier; static induction type power rectifier; static induction type rectifier; Anodes; Cathodes; Circuits; Design methodology; Electrostatic discharge; Low voltage; P-i-n diodes; PIN photodiodes; Rectifiers; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702677

Filename

702677