Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots

We report here on the efficient use of hydrogenation as a tool to investigate the non-radiative recombination channels in a low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) grown quantum dots (QDs) array emitting around 1.3 μm. It is shown that hydrogenation significantly reduces the flow of charge carriers to non-radiative channels in QDs related to the presence of impurities and further suppresses completely the non-radiative recombinations originating from the stacking faults and dangling bonds. Most importantly, hydrogenation improves the room temperature photoluminescence intensity of the ≈1.3 μm emitting In(Ga)As/GaAs QDs by a factor close to ten.