DocumentCode
3368779
Title
A consideration on electrical characteristics of high power SIThs [thyristors]
Author
Yamada, S. ; Morikawa, Y. ; Kekura, M. ; Kawamura, T. ; Miyazaki, S. ; Ichikawa, F. ; Kishibe, H.
Author_Institution
Product Dev. Lab., Meidensha Corp., Numazu, Japan
fYear
1998
fDate
3-6 Jun 1998
Firstpage
241
Lastpage
244
Abstract
The characteristics of high power static induction thyristors have been analyzed and SIThs were fabricated using a segment structure. In the segment structure, it was found that the low ranch gate resistance is effective for weakening the current crowding during turn-off. As a result, 4.5 kV-1 kA SIThs from 70 mm φ pellets have been made on an experimental basis and evaluated
Keywords
electric current; electric resistance; semiconductor device models; semiconductor device testing; thyristors; 1 kA; 4.5 kV; 70 mm; SITh pellets; electrical characteristics; power SIThs; ranch gate resistance; segment structure; static induction thyristors; turn-off current crowding; Analytical models; Anodes; Cathodes; Electric variables; Electrodes; Fabrication; Lithography; Metalworking machines; Research and development; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location
Kyoto
ISSN
1063-6854
Print_ISBN
0-7803-4752-8
Type
conf
DOI
10.1109/ISPSD.1998.702678
Filename
702678
Link To Document