Title :
High-speed, resonant-cavity photodetectors
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In the process of implementing separate absorption multiplication (SAM) avalnche photodiodes (APDs) into resonant-cavity structures we have found it necessary to reduce the dimensions of the multiplication region and this has led to improved and intriguing avalanche characteristics. This talk will focus on two types of resonant-cavity photodiodes: Si-based p-i-n photodiodes and SAM APDs
Keywords :
avalanche photodiodes; high-speed optical techniques; optical resonators; p-i-n photodiodes; photodetectors; Si; Si-based p-i-n photodiodes; avalanche characteristics; high-speed resonant-cavity photodetectors; multiplication region; resonant-cavity photodiodes; resonant-cavity structures; separate absorption multiplication avalnche photodiodes; Absorption; Bandwidth; Ionization; Mirrors; Optical noise; PIN photodiodes; Photodetectors; Photonic band gap; Resonance; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630602
