Growth of GaAsSb/InP heterostructures by OMVPE

Author

Watkins, S.P. ; Bolognesi, C.R. ; Thewalt, M.L.W. ; Kavanagh, K.L. ; Xu, X.G. ; Matine, N. ; Wang, C.X. ; Liu, J. ; Zhang, X. ; Pitts, O.J. ; Stotz, J.A.H. ; Wiersma, R.D. ; Najmi, B. ; Jiang, W.Y.

Author_Institution

Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada

fYear

2004

fDate

31 May-4 June 2004

Firstpage

108

Lastpage

113

Abstract

This paper summarizes several important aspects of the growth of GaAsSb/InP heterostructures for the fabrication of high speed double heterojunction bipolar transistors (DHBTs). Some of the challenges in OMVPE growth of antimonide/phosphide compounds are discussed, including segregation, interface issues, and control of carbon at very high doping levels. We also discuss the effect of hydrogen passivation and the role of atomic ordering and compositional modulation, including its effect on electrical properties.

Keywords

III-V semiconductors; MOCVD; arsenic compounds; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; photoluminescence; segregation; semiconductor doping; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; DHBT; GaAsSb-InP; OMVPE; antimonide-phosphide compounds; atomic ordering; carbon; compositional modulation; doping levels; heterostructures; high speed double heterojunction bipolar transistors; hydrogen passivation; segregation; Carbon compounds; Doping; Double heterojunction bipolar transistors; Fabrication; Gallium arsenide; Hydrogen; Indium phosphide; Inductors; Physics; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442623

Filename

1442623