Influence of moderate temperature annealing on surface fermi level in p-type InP: X-ray photoemission study

Author

Sakai, M. ; Shibata, D. ; Takakuwa, A. ; Saito, Y.

Author_Institution

Fac. of Eng., Saitama Univ., Urawa, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

130

Lastpage

133

Abstract

Influence of annealing on the surface band bending potential V_s in p-type (100) InP wafer has been investigated by X-ray photoelectron spectroscopy (XPS) as well as photoreflectance (PR). Our previous optical observation of the 220 °C annealing-induced abrupt change in V_s was also observed by the present XPS study, although X-ray irradiation due to XPS affects strongly V_s of the sample annealed at temperatures below 200 °C and above 300 °C. In addition, it is shown that annealing at 220 °C causes an abrupt change in the chemical shift of near surface In atoms. A phenomenological explanation for the mechanism of the Fermi level pinning at (100) InP surface will be proposed.

Keywords

Fermi level; III-V semiconductors; X-ray photoelectron spectra; annealing; chemical shift; indium compounds; photoreflectance; surface chemistry; surface states; 220 degC; InP; X-ray irradiation; X-ray photoelectron spectroscopy; X-ray photoemission; XPS; chemical shift; moderate temperature annealing; photoreflectance; surface Fermi level pinning; surface band bending potential; Annealing; Chemicals; Etching; Gallium arsenide; Indium phosphide; Microscopy; Photoelectricity; Spectroscopy; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442628

Filename

1442628