DocumentCode
3369027
Title
Stochastic gradient descent for robust inverse photomask synthesis in optical lithography
Author
Jia, Ningning ; Lam, Edmund Y.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
fYear
2010
fDate
26-29 Sept. 2010
Firstpage
4173
Lastpage
4176
Abstract
Optical lithography is a critical step in the semiconductor manufacturing process, and one key problem is the design of the photomask for a particular circuit pattern, given the optical aberrations and diffraction effects associated with the small feature size. Inverse lithography synthesizes an optimal mask by treating the design as an image synthesis inverse problem. To date, much effort is dedicated to solving it for some nominal process conditions. However, the small feature size also suggests that the effect of process variations is more pronounced. In this paper, we design a mask that is robust against focus variations within the inverse lithography framework. Each iteration involves more computation than a similar method designed for the nominal conditions, but we simplify the task by using stochastic gradient descent, which is a technique from machine learning. Simulation shows that the proposed algorithm is effective in producing robust masks.
Keywords
aberrations; electronic engineering computing; integrated circuit design; integrated circuit manufacture; learning (artificial intelligence); masks; photolithography; diffraction effects; image synthesis inverse problem; inverse lithography framework; machine learning; optical aberrations; optical lithography; optimal mask; robust inverse photomask synthesis; semiconductor manufacturing process; stochastic gradient descent; Adaptive optics; Lithography; Machine learning; Optical imaging; Robustness; Training; Inverse imaging; lithography; machine learning; optical proximity correction; robustness; stochastic gradient descent;
fLanguage
English
Publisher
ieee
Conference_Titel
Image Processing (ICIP), 2010 17th IEEE International Conference on
Conference_Location
Hong Kong
ISSN
1522-4880
Print_ISBN
978-1-4244-7992-4
Electronic_ISBN
1522-4880
Type
conf
DOI
10.1109/ICIP.2010.5653690
Filename
5653690
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