Title :
Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
Author :
Dhellemmes, S. ; Godey, S. ; Wilk, A. ; Wallart, X. ; Mollot, F.
Author_Institution :
CNRS, Villeneuve d´´Ascq, France
fDate :
31 May-4 June 2004
Abstract :
We investigate GalnP/GaAs high electron mobility transistor structures grown in a production MBE system, with different interface commutation procedures. They have been designed to be very sensitive to the interface quality. They have been characterized by Hall measurements and photoluminescence. GaP-type and GalnAs-type interfaces can be distinguished. Best mobility results occur for few second or even no growth interruption, demonstrating the very low As memory effect of this large system.
Keywords :
Hall mobility; III-V semiconductors; commutation; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; interface structure; molecular beam epitaxial growth; photoluminescence; GaInP-GaAs; Hall measurements; MBE; high electron mobility transistor structures; interface commutation procedures; photoluminescence; Doping; Energy states; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Photoluminescence; Production systems; Testing; Wave functions;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442635
