Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system

Author

Dhellemmes, S. ; Godey, S. ; Wilk, A. ; Wallart, X. ; Mollot, F.

Author_Institution

CNRS, Villeneuve d´´Ascq, France

fYear

2004

fDate

31 May-4 June 2004

Firstpage

159

Lastpage

162

Abstract

We investigate GalnP/GaAs high electron mobility transistor structures grown in a production MBE system, with different interface commutation procedures. They have been designed to be very sensitive to the interface quality. They have been characterized by Hall measurements and photoluminescence. GaP-type and GalnAs-type interfaces can be distinguished. Best mobility results occur for few second or even no growth interruption, demonstrating the very low As memory effect of this large system.

Keywords

Hall mobility; III-V semiconductors; commutation; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; interface structure; molecular beam epitaxial growth; photoluminescence; GaInP-GaAs; Hall measurements; MBE; high electron mobility transistor structures; interface commutation procedures; photoluminescence; Doping; Energy states; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Photoluminescence; Production systems; Testing; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442635

Filename

1442635