Mechanical stress caused by adsorption of O or N on a Ga-terminated (100) GaAs surface: O gives compressive stress but N don´t

Author

Seto, H. ; Miyamura, S. ; Inokuma, T. ; Iiyama, K. ; Takamiya, S.

Author_Institution

Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

171

Lastpage

174

Abstract

Effects of adsorption of O or N on a (1 × 1)-(100) Ga-terminated GaAs were studied using small cluster models and first principle calculations. Calculation results suggest that oxidation gives compressive stress to the surface but nitridation don´t. This partly explains that nitridation improves crystal disorder of oxidized GaAs. The authors calculated similar adsorption effects on InAlAs. Nitridation-after-oxidation does not realize a good interface on an InAlAs surface.

Keywords

III-V semiconductors; ab initio calculations; adsorption; aluminium compounds; compressive strength; gallium arsenide; indium compounds; nitridation; nitrogen; oxidation; oxygen; GaAs; InAlAs; N; O; adsorption; cluster models; compressive stress; crystal disorder; first principle calculations; mechanical stress; nitridation; oxidation; Annealing; Atomic layer deposition; Atomic measurements; Bridges; Compressive stress; Gallium arsenide; Nearest neighbor searches; Nitrogen; Oxidation; Plasmas;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442638

Filename

1442638