• DocumentCode
    3369210
  • Title

    Through-silicon-via management during 3D physical design: When to add and how many?

  • Author

    Pathak, Mohit ; Lee, Young-Joon ; Moon, Thomas ; Lim, Sung Kyu

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    387
  • Lastpage
    394
  • Abstract
    In 3D integrated circuits through silicon vias (TSVs) are used to connect different dies stacked on top of each other. These TSV occupy silicon area and have significantly larger area than regular gates. In this paper, we address two critical aspects of TSV management in 3D designs. First, we address the problem of how many TSVs to add in a design. Since TSVs occupy significant silicon area, a general tendency has been to use a minimum number of TSVs in 3D circuits. We show that such an approach does not give us the best possible result. Second, we address the problem of TSV insertion. Because TSVs occupy silicon area, their location is decided during the placement stage of 3D design. However, we show that this is not the best possible stage for TSV insertion. We propose a change in the physical design flow for 3D integrated circuits to address the limitations of existing TSV placement methodology. All our algorithms are integrated with commercial tools, and our results are validated based on actual GDSII layouts. Our experimental results show the effectiveness of our methods.
  • Keywords
    circuit CAD; integrated circuit design; three-dimensional integrated circuits; 3D integrated circuit; 3D physical design; GDSII layout; TSV insertion; TSV management; TSV placement methodology; physical design flow; through-silicon-via management; Logic gates; Routing; Silicon; Three dimensional displays; Through-silicon vias; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2010 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4244-8193-4
  • Type

    conf

  • DOI
    10.1109/ICCAD.2010.5653703
  • Filename
    5653703