Depletion/enhancement mode InAlAs/InGaAs-MOSHEMTs with nm-thin gate insulating layers formed by oxidation of the InAlAs layer

Author

Nakamura, K. ; Paul, N.C. ; Takebe, M. ; Iiyama, K. ; Takamiya, S.

Author_Institution

Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

191

Lastpage

194

Abstract

Photoluminescence intensity of an oxidized InAlAs initially decreased in a short period, then recovers by few hours oxidation. That of nitridated InAlAs gradually and monotonously decreases until 8 hours. Nitridation after oxidation of InAlAs does not increase the photoluminescence intensity. We fabricated the recess gate InAlAs/InGaAs-MOSHEMT based on the above experiment in which 5 nm thin oxide layer is formed by ozone process. The transconductance of the MOSHEMT is 200 mS/mm for a gate length of 1.5 μm.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; electric admittance; gallium arsenide; high electron mobility transistors; indium compounds; nitridation; oxidation; photoluminescence; 1.5 mum; 5 nm; InAlAs-InGaAs; depletion-enhancement mode MOSHEMT; nitridation; nm-thin gate insulating layers; oxidation; photoluminescence; transconductance; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; Indium compounds; Indium phosphide; Insulation; Oxidation; Photoluminescence; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442643

Filename

1442643