Title :
Excellent silicon thickness uniformity on Ultra-Thin SOI for controlling Vt variation of FDSOI
Author :
Schwarzenbach, W. ; Cauchy, X. ; Boedt, F. ; Bonnin, O. ; Butaud, E. ; Girard, C. ; Nguyen, B.-Y. ; Mazure, C. ; Maleville, C.
Author_Institution :
SOITEC, Parc Technol. des Fontaines, Crolles, France
Abstract :
Thickness uniformity of the Ultra Thin SOI (UTSOI) substrates is one of the key criteria to control Vt variation of the planar FDSOI devices. We present an evolutionary approach to SmartCut™ technology which already allows achieving a maximum total SOI layer thickness variation of less than ± 10 Å on preproduction volume. Total thickness variation of ± 5 Å is targeted.
Keywords :
elemental semiconductors; silicon; silicon-on-insulator; FDSOI; SmartCut technology; silicon thickness uniformity; ultrathin SOI substrates; CMOS integrated circuits; CMOS technology; Fluctuations; Production; Silicon; Substrates; Thickness control;
Conference_Titel :
IC Design & Technology (ICICDT), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4244-9019-6
DOI :
10.1109/ICICDT.2011.5783188
